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Your search for "gallium nitride (GaN)" gave back 8187 results.
Gallium nitride (GaN) devices are especially well suited. for high-power applications that operate at high fre- quencies, such as radio frequency (RF...
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MRRPB5
May 2024
Price: USD 2,900.00
Silicon Carbide (SiC) and Gallium Nitride (GaN) devices and modules are advanced semiconductor components used in various high-performance electronic...
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LPI
August 2024
Price: USD 3,660.00
The global GaN Power Semiconductor Devices market size was valued at US$ 168.1 million in 2023. With growing demand in downstream market, the GaN...
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LPI
February 2024
Price: USD 3,660.00
Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors...
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MRRPB5
March 2024
Price: USD 3,950.00
The global SiC & GaN Power Devices market size was valued at US$ 1020.2 million in 2023. With growing demand in downstream market, the SiC &...
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LPI
January 2024
Price: USD 3,660.00
4-inch GaN Single Crystal Substrate: A 4-inch (~100 mm) diameter gallium nitride (GaN) single crystal substrate used in the fabrication of high...
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GIR
September 2024
Price: USD 3,480.00
The global WBG Power Devices market size is predicted to grow from US$ 2382 million in 2025 to US$ 14190 million in 2031; it is expected to grow at a...
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LPI
March 2025
Price: USD 3,660.00
The global market for Integrated Microwave Components was valued at US$ 1770 million in the year 2024 and is projected to reach a revised size of US...
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MRRPB5
January 2025
Price: USD 2,900.00
Silicon Carbide (SiC) and Gallium Nitride (GaN) devices and modules are advanced semiconductor components used in various high-performance electronic...
°ä²¹³Ù²¹±ô´Ç²µ:Ìý
MRRPB5
July 2024
Price: USD 2,900.00
Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors...
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MRRPB5
January 2023
Price: USD 4,000.00
This report studies the WBG Power Devices market, Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large...
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MRRPB5
October 2023
Price: USD 2,900.00
High electron mobility transistors (HEMTs) are transistors that use a 2-dimensional electron gas (2DEG) that is created by a junction between two...
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MRRPB5
April 2023
Price: USD 2,900.00
Gallium nitride (GaN)-on-Diamond technology is a pioneering materials invention from Akash co-founder, Felix Ejeckam that is created by lifting GaN...
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GIR
August 2024
Price: USD 3,480.00
Gallium nitride (GaN)-on-Diamond technology is a pioneering materials invention from Akash co-founder, Felix Ejeckam that is created by lifting GaN...
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MRRPB5
January 2023
Price: USD 2,900.00
The global market for GaN Solid-State Power Amplifiers was valued at US$ million in the year 2024 and is projected to reach a revised size of US$...
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MRRPB5
February 2025
Price: USD 2,900.00
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