High electron mobility transistors (HEMTs) are transistors that use a 2-dimensional electron gas (2DEG) that is created by a junction between two materials with different band gaps. Gallium nitride (GaN) based HEMTs feature faster switching speed, higher thermal conductivity and lower on-resistance than comparable silicon-based solutions. These features allow GaN transistors and integrated circuits to be used in circuits to increase efficiency, shrink the size, and reduce the cost of a wide variety of power conversion systems.
The global Gallium Nitride High-electron-mobility Transistor market was valued at US$ million in 2022 and is anticipated to reach US$ million by 2029, witnessing a CAGR of % during the forecast period 2023-2029. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
North American market for Gallium Nitride High-electron-mobility Transistor is estimated to increase from $ million in 2023 to reach $ million by 2029, at a CAGR of % during the forecast period of 2023 through 2029.
Asia-Pacific market for Gallium Nitride High-electron-mobility Transistor is estimated to increase from $ million in 2023 to reach $ million by 2029, at a CAGR of % during the forecast period of 2023 through 2029.
The key global companies of Gallium Nitride High-electron-mobility Transistor include Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor and Fujitsu, etc. In 2022, the world's top three vendors accounted for approximately % of the revenue.
Report Scope
This report aims to provide a comprehensive presentation of the global market for Gallium Nitride High-electron-mobility Transistor, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Gallium Nitride High-electron-mobility Transistor.
The Gallium Nitride High-electron-mobility Transistor market size, estimations, and forecasts are provided in terms of output/shipments (K Units) and revenue ($ millions), considering 2022 as the base year, with history and forecast data for the period from 2018 to 2029. This report segments the global Gallium Nitride High-electron-mobility Transistor market comprehensively. Regional market sizes, concerning products by type, by application and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the Gallium Nitride High-electron-mobility Transistor manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by type, by application, and by regions.
By Company
Nexperia
GaN Systems
Infineon Technologies
STMicroelectronics
TI
Renesas
ON Semiconductor
Fujitsu
Segment by Type
100V
400V
600V
650V
Segment by Application
Consumer Electronics
Automotive
Medical Industry
Others
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
United States
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America
Mexico
Brazil
Core Chapters
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by type, by application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of Gallium Nitride High-electron-mobility Transistor manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of Gallium Nitride High-electron-mobility Transistor by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of Gallium Nitride High-electron-mobility Transistor in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the key companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
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1 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Overview
1.1 Product Definition
1.2 Gallium Nitride High-electron-mobility Transistor Segment by Type
1.2.1 Global Gallium Nitride High-electron-mobility Transistor 麻豆原创 Value Growth Rate Analysis by Type 2022 VS 2029
1.2.2 100V
1.2.3 400V
1.2.4 600V
1.2.5 650V
1.3 Gallium Nitride High-electron-mobility Transistor Segment by Application
1.3.1 Global Gallium Nitride High-electron-mobility Transistor 麻豆原创 Value Growth Rate Analysis by Application: 2022 VS 2029
1.3.2 Consumer Electronics
1.3.3 Automotive
1.3.4 Medical Industry
1.3.5 Others
1.4 Global 麻豆原创 Growth Prospects
1.4.1 Global Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
1.4.2 Global Gallium Nitride High-electron-mobility Transistor Production Capacity Estimates and Forecasts (2018-2029)
1.4.3 Global Gallium Nitride High-electron-mobility Transistor Production Estimates and Forecasts (2018-2029)
1.4.4 Global Gallium Nitride High-electron-mobility Transistor 麻豆原创 Average Price Estimates and Forecasts (2018-2029)
1.5 Assumptions and Limitations
2 麻豆原创 Competition by Manufacturers
2.1 Global Gallium Nitride High-electron-mobility Transistor Production 麻豆原创 Share by Manufacturers (2018-2023)
2.2 Global Gallium Nitride High-electron-mobility Transistor Production Value 麻豆原创 Share by Manufacturers (2018-2023)
2.3 Global Key Players of Gallium Nitride High-electron-mobility Transistor, Industry Ranking, 2021 VS 2022 VS 2023
2.4 Global Gallium Nitride High-electron-mobility Transistor 麻豆原创 Share by Company Type (Tier 1, Tier 2 and Tier 3)
2.5 Global Gallium Nitride High-electron-mobility Transistor Average Price by Manufacturers (2018-2023)
2.6 Global Key Manufacturers of Gallium Nitride High-electron-mobility Transistor, Manufacturing Base Distribution and Headquarters
2.7 Global Key Manufacturers of Gallium Nitride High-electron-mobility Transistor, Product Offered and Application
2.8 Global Key Manufacturers of Gallium Nitride High-electron-mobility Transistor, Date of Enter into This Industry
2.9 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Competitive Situation and Trends
2.9.1 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Concentration Rate
2.9.2 Global 5 and 10 Largest Gallium Nitride High-electron-mobility Transistor Players 麻豆原创 Share by Revenue
2.10 Mergers & Acquisitions, Expansion
3 Gallium Nitride High-electron-mobility Transistor Production by Region
3.1 Global Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts by Region: 2018 VS 2022 VS 2029
3.2 Global Gallium Nitride High-electron-mobility Transistor Production Value by Region (2018-2029)
3.2.1 Global Gallium Nitride High-electron-mobility Transistor Production Value 麻豆原创 Share by Region (2018-2023)
3.2.2 Global Forecasted Production Value of Gallium Nitride High-electron-mobility Transistor by Region (2024-2029)
3.3 Global Gallium Nitride High-electron-mobility Transistor Production Estimates and Forecasts by Region: 2018 VS 2022 VS 2029
3.4 Global Gallium Nitride High-electron-mobility Transistor Production by Region (2018-2029)
3.4.1 Global Gallium Nitride High-electron-mobility Transistor Production 麻豆原创 Share by Region (2018-2023)
3.4.2 Global Forecasted Production of Gallium Nitride High-electron-mobility Transistor by Region (2024-2029)
3.5 Global Gallium Nitride High-electron-mobility Transistor 麻豆原创 Price Analysis by Region (2018-2023)
3.6 Global Gallium Nitride High-electron-mobility Transistor Production and Value, Year-over-Year Growth
3.6.1 North America Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
3.6.2 Europe Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
3.6.3 China Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
3.6.4 Japan Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
3.6.5 South Korea Gallium Nitride High-electron-mobility Transistor Production Value Estimates and Forecasts (2018-2029)
4 Gallium Nitride High-electron-mobility Transistor Consumption by Region
4.1 Global Gallium Nitride High-electron-mobility Transistor Consumption Estimates and Forecasts by Region: 2018 VS 2022 VS 2029
4.2 Global Gallium Nitride High-electron-mobility Transistor Consumption by Region (2018-2029)
4.2.1 Global Gallium Nitride High-electron-mobility Transistor Consumption by Region (2018-2023)
4.2.2 Global Gallium Nitride High-electron-mobility Transistor Forecasted Consumption by Region (2024-2029)
4.3 North America
4.3.1 North America Gallium Nitride High-electron-mobility Transistor Consumption Growth Rate by Country: 2018 VS 2022 VS 2029
4.3.2 North America Gallium Nitride High-electron-mobility Transistor Consumption by Country (2018-2029)
4.3.3 United States
4.3.4 Canada
4.4 Europe
4.4.1 Europe Gallium Nitride High-electron-mobility Transistor Consumption Growth Rate by Country: 2018 VS 2022 VS 2029
4.4.2 Europe Gallium Nitride High-electron-mobility Transistor Consumption by Country (2018-2029)
4.4.3 Germany
4.4.4 France
4.4.5 U.K.
4.4.6 Italy
4.4.7 Russia
4.5 Asia Pacific
4.5.1 Asia Pacific Gallium Nitride High-electron-mobility Transistor Consumption Growth Rate by Region: 2018 VS 2022 VS 2029
4.5.2 Asia Pacific Gallium Nitride High-electron-mobility Transistor Consumption by Region (2018-2029)
4.5.3 China
4.5.4 Japan
4.5.5 South Korea
4.5.6 China Taiwan
4.5.7 Southeast Asia
4.5.8 India
4.6 Latin America, Middle East & Africa
4.6.1 Latin America, Middle East & Africa Gallium Nitride High-electron-mobility Transistor Consumption Growth Rate by Country: 2018 VS 2022 VS 2029
4.6.2 Latin America, Middle East & Africa Gallium Nitride High-electron-mobility Transistor Consumption by Country (2018-2029)
4.6.3 Mexico
4.6.4 Brazil
4.6.5 Turkey
5 Segment by Type
5.1 Global Gallium Nitride High-electron-mobility Transistor Production by Type (2018-2029)
5.1.1 Global Gallium Nitride High-electron-mobility Transistor Production by Type (2018-2023)
5.1.2 Global Gallium Nitride High-electron-mobility Transistor Production by Type (2024-2029)
5.1.3 Global Gallium Nitride High-electron-mobility Transistor Production 麻豆原创 Share by Type (2018-2029)
5.2 Global Gallium Nitride High-electron-mobility Transistor Production Value by Type (2018-2029)
5.2.1 Global Gallium Nitride High-electron-mobility Transistor Production Value by Type (2018-2023)
5.2.2 Global Gallium Nitride High-electron-mobility Transistor Production Value by Type (2024-2029)
5.2.3 Global Gallium Nitride High-electron-mobility Transistor Production Value 麻豆原创 Share by Type (2018-2029)
5.3 Global Gallium Nitride High-electron-mobility Transistor Price by Type (2018-2029)
6 Segment by Application
6.1 Global Gallium Nitride High-electron-mobility Transistor Production by Application (2018-2029)
6.1.1 Global Gallium Nitride High-electron-mobility Transistor Production by Application (2018-2023)
6.1.2 Global Gallium Nitride High-electron-mobility Transistor Production by Application (2024-2029)
6.1.3 Global Gallium Nitride High-electron-mobility Transistor Production 麻豆原创 Share by Application (2018-2029)
6.2 Global Gallium Nitride High-electron-mobility Transistor Production Value by Application (2018-2029)
6.2.1 Global Gallium Nitride High-electron-mobility Transistor Production Value by Application (2018-2023)
6.2.2 Global Gallium Nitride High-electron-mobility Transistor Production Value by Application (2024-2029)
6.2.3 Global Gallium Nitride High-electron-mobility Transistor Production Value 麻豆原创 Share by Application (2018-2029)
6.3 Global Gallium Nitride High-electron-mobility Transistor Price by Application (2018-2029)
7 Key Companies Profiled
7.1 Nexperia
7.1.1 Nexperia Gallium Nitride High-electron-mobility Transistor Corporation Information
7.1.2 Nexperia Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.1.3 Nexperia Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.1.4 Nexperia Main Business and 麻豆原创s Served
7.1.5 Nexperia Recent Developments/Updates
7.2 GaN Systems
7.2.1 GaN Systems Gallium Nitride High-electron-mobility Transistor Corporation Information
7.2.2 GaN Systems Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.2.3 GaN Systems Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.2.4 GaN Systems Main Business and 麻豆原创s Served
7.2.5 GaN Systems Recent Developments/Updates
7.3 Infineon Technologies
7.3.1 Infineon Technologies Gallium Nitride High-electron-mobility Transistor Corporation Information
7.3.2 Infineon Technologies Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.3.3 Infineon Technologies Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.3.4 Infineon Technologies Main Business and 麻豆原创s Served
7.3.5 Infineon Technologies Recent Developments/Updates
7.4 STMicroelectronics
7.4.1 STMicroelectronics Gallium Nitride High-electron-mobility Transistor Corporation Information
7.4.2 STMicroelectronics Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.4.3 STMicroelectronics Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.4.4 STMicroelectronics Main Business and 麻豆原创s Served
7.4.5 STMicroelectronics Recent Developments/Updates
7.5 TI
7.5.1 TI Gallium Nitride High-electron-mobility Transistor Corporation Information
7.5.2 TI Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.5.3 TI Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.5.4 TI Main Business and 麻豆原创s Served
7.5.5 TI Recent Developments/Updates
7.6 Renesas
7.6.1 Renesas Gallium Nitride High-electron-mobility Transistor Corporation Information
7.6.2 Renesas Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.6.3 Renesas Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.6.4 Renesas Main Business and 麻豆原创s Served
7.6.5 Renesas Recent Developments/Updates
7.7 ON Semiconductor
7.7.1 ON Semiconductor Gallium Nitride High-electron-mobility Transistor Corporation Information
7.7.2 ON Semiconductor Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.7.3 ON Semiconductor Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.7.4 ON Semiconductor Main Business and 麻豆原创s Served
7.7.5 ON Semiconductor Recent Developments/Updates
7.8 Fujitsu
7.8.1 Fujitsu Gallium Nitride High-electron-mobility Transistor Corporation Information
7.8.2 Fujitsu Gallium Nitride High-electron-mobility Transistor Product Portfolio
7.8.3 Fujitsu Gallium Nitride High-electron-mobility Transistor Production, Value, Price and Gross Margin (2018-2023)
7.8.4 Fujitsu Main Business and 麻豆原创s Served
7.7.5 Fujitsu Recent Developments/Updates
8 Industry Chain and Sales Channels Analysis
8.1 Gallium Nitride High-electron-mobility Transistor Industry Chain Analysis
8.2 Gallium Nitride High-electron-mobility Transistor Key Raw Materials
8.2.1 Key Raw Materials
8.2.2 Raw Materials Key Suppliers
8.3 Gallium Nitride High-electron-mobility Transistor Production Mode & Process
8.4 Gallium Nitride High-electron-mobility Transistor Sales and 麻豆原创ing
8.4.1 Gallium Nitride High-electron-mobility Transistor Sales Channels
8.4.2 Gallium Nitride High-electron-mobility Transistor Distributors
8.5 Gallium Nitride High-electron-mobility Transistor Customers
9 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Dynamics
9.1 Gallium Nitride High-electron-mobility Transistor Industry Trends
9.2 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Drivers
9.3 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Challenges
9.4 Gallium Nitride High-electron-mobility Transistor 麻豆原创 Restraints
10 Research Finding and Conclusion
11 Methodology and Data Source
11.1 Methodology/Research Approach
11.1.1 Research Programs/Design
11.1.2 麻豆原创 Size Estimation
11.1.3 麻豆原创 Breakdown and Data Triangulation
11.2 Data Source
11.2.1 Secondary Sources
11.2.2 Primary Sources
11.3 Author List
11.4 Disclaimer
Nexperia
GaN Systems
Infineon Technologies
STMicroelectronics
TI
Renesas
ON Semiconductor
Fujitsu
听
听
*If Applicable.
